- stand-alone or with a PC
- automatic component type identification
- automatic pinout identification
- special feature identification such as protection diodes and resistor shunts
- bipolar transistors: gain and leakage current measurements, silicon and germanium detection
- gate threshold measurement for Enhancement Mode MOSFETs
- semiconductor forward voltage measurement for diodes, LEDs and
transistor Base-Emitter junctions - automatic and manual power-off
Specifications
| Product basic info |
|---|
| Primary colours | Grey |
| Additional colours | Black |
| Depth unit | 20 mm |
| Height unit | 70 mm |
| Width unit | 103 mm |
| Weight unit | 98 g |
| Technical data |
|---|
| Maximum peak test current into s/c | 12 mA |
| Maximum peak test voltage across o/s | 12 V |
| Diode specs | - Test current: 5.0 mA
- Voltage accuracy: -2% -20 mV to +2% +20 mV
- Vf for LED identification: 1.50 V - 4.00 V
- Short circuit threshold: 10 Ohm
|
| SCR/triac specs | - Gate test current: 4.5 mA
- Load test current: 5.0 mA
|
| Transistor specs | - Gain range (Hfe): 4 - 65000
- Gain accuracy: ± 3 % ± 5 Hfe
- Vceo test voltage: 2.0 V - 3.0 V
- Vbe accuracy: -2 % -20 mV to +2 % +20 mV
- VBE for Darlington (shunted): 0.95 V - 1.80 V (0.75 V - 1.80 V)
- Base-emitter shunt threshold: 50 kOhm - 70 kOhm
- BJT collector test current: 2.45 mA - 2.55 mA
- BJT acceptable leakage: 0.7 mA
- MOSFET:
- Gate threshold range: 0.1 V - 5.0 V
- Threshold accuracy: -2 % -20 mV to +2 % +20 mV
- Drain test current: 2.45 mA - 2.55 mA
- Gate resistance: 8 kOhm
- Depletion drain test current: 4.5 mA
- JFET drain-source test current: 0.5 mA - 5.5 mA
|
| Environmental data |
|---|
| Operating temperature range | 10-40 °C |
| Power supply |
|---|
| Batteries included | |
| Number of batteries | 1 |
| Battery voltage rating | 1.5 V |
| Battery composition | Alkaline |
| Battery IEC size | AAA (LR03, R03, FR03, HR03, KR03, ZR03 ,24A, 24D, 24LF, UM4, Micro, MN2400, MX2400, MV2400) |
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